High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs
نویسندگان
چکیده
منابع مشابه
High-frequency capability of Schottky-barrier carbon nanotube FETs
The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which ...
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A model is proposed for the previously reported lower Schottky barrier FBh for hole transport in air than in vacuum at a junction between the metallic electrode and semiconducting carbon nanotube ~CNT!. We consider the electrostatics in a transition region between the electrode and CNT in the presence or absence of oxygen molecules ~air or vacuum!, where an appreciable potential drop occurs. Th...
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Carbon Nanotube FETs (CNFETs) are showing significant promise in nanoelectronics. They are one of the principle areas of research that are seen as having the capability of replacing MOSFET transistors. In fact, their performance is much better than MOSFETs below 10nm [1], with the operation frequencies of CNFET devices being up to1000 times greater. This project investigates various properties ...
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ژورنال
عنوان ژورنال: Solid State Phenomena
سال: 2007
ISSN: 1662-9779
DOI: 10.4028/www.scientific.net/ssp.121-123.693